Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals (2006) Sakwe A, Müller R, Masri P, Wellmann P Journal article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Anomalous charge carrier transport phenomena in highly aluminum doped SiC (2006) Müller R, Künecke U, Weingärtner R, Maier M, Wellmann P Journal article Modeling and experimental verification of SiC M-PVT bulk crystal growth (2006) Wellmann P, Müller R, Pons M Journal article, Original article Additional pipework opens up transistor applications for SiC (2005) Wellmann P Journal article, Original article Optical mapping of aluminum doped p-type SiC wafers (2005) Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, et al. Journal article SiC single crystal growth by a modified physical vapor transport technique (2005) Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, et al. Journal article Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics (2005) Pons M, Nishizawa SI, Wellmann P, Ucar M, Blanquet E, Dedulle J, Baillet F, et al. Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article