Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai (2007) Wellmann P, Feng Z, Shi G Edited Volume Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies (2007) Jang YS, Sakwe A, Wellmann P, Juillaguet S, Peyre H, Camassel J, Steeds JW Journal article, Original article Defect etching of non-polar and semi-polar faces in SiC (2007) Sakwe A, Jang YS, Wellmann P Journal article, Original article Impact of n-type versus p-type doping on mechanical properties and dislocation evolution during SiC crystal growth (2007) Wellmann P, Hens P, Sakwe A, Queren D, Müller R, Durst K, Göken M Journal article, Original article Influence of growth temperature on the evolution of dislocations during PVT growth of bulk SiC single crystals (2007) Sakwe A, Wellmann P Journal article, Original article In-situ X-ray measurements of defect generation during PVT growth of SiC (2007) Konias K, Hock R, Stockmeier M, Wellmann P, Miller M, Ossege S, Magerl A Journal article, Original article Vapor growth of SiC bulk crystals and its challenge of doping (2006) Wellmann P, Müller R, Queren D, Sakwe A, Pons M Journal article Silicon carbide CVD for electronic device applications (2006) Wellmann P, Pons M Journal article, Editorial Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006) Müller R, Künecke U, Queren D, Sakwe A, Wellmann P Journal article Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping (2006) Künecke U, Wellmann P Journal article