Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Investigation of the Nucleation Process During the Initial Stage of PVT Growth of 4H-SiC (2023) Strüber S, Arzig M, Steiner J, Salamon M, Uhlmann N, Wellmann P Book chapter / Article in edited volumes Effect of Growth Conditions on the Surface Morphology and Defect Density of CS-PVT-Grown 3C-SiC (2023) Kollmuß M, La Via F, Wellmann P Journal article In situ bow reduction during sublimation growth of cubic silicon carbide (2022) Kollmuß M, Mauceri M, Roder M, La Via F, Wellmann P Journal article Multiscale Simulations for Defect-Controlled Processing of Group IV Materials (2022) Calogero G, Deretzis I, Fisicaro G, Kollmuß M, La Via F, Lombardo SF, Schöler M, et al. Journal article Fabrication of Bariumtrisulphide Thin Films as Precursors for Chalcogenide Perovskites (2022) Freund T, Cicconi MR, Wellmann P Journal article Determination of site occupancy of boron in 6H-SiC by multiple-wavelength neutron holography (2022) Hayashi K, Lederer M, Fukumoto Y, Goto M, Yamamoto Y, Happo N, Harada M, et al. Journal article Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process (2022) Steiner J, Wellmann P Journal article Large Area Growth of Cubic Silicon Carbide Using Close Space PVT by Application of Homoepitaxial Seeding (2022) Kollmuß M, Schöler M, Anzalone R, Mauceri M, La Via F, Wellmann P Conference contribution In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry (2022) Ihle J, Wellmann P Conference contribution Applicability of a Flat-Bed Birefringence Setup for the Determination of Threading Dislocations of Silicon Carbide Wafers (2022) Steiner J, Nguyen BD, Roder M, Danilewsky A, Sandfeld S, Wellmann P Conference contribution