Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Silicon carbide growth: C/Si ratio evaluation and modeling (2009) Pons M, Nishizawa SI, Wellmann P, Blanquet E, Chaussende D, Dedulle J, Madar R Journal article, Original article Photoluminescence-topography of the p-type Doped SiC Wafers for Determination of Doping Inhomogeneity (2009) Oehlschläger F, Juillaguet S, Peyre H, Calmassel J, Wellmann P Journal article, Original article In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article P- and n-type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates (2009) Hens P, Syvaejaervi M, Oehlschläger F, Wellmann P, Yakimova R Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article Aluminum p-type Doping of Bulk SiC Single Crystals by Tri-Methyl-Aluminum (2009) Hens P, Künecke U, Wellmann P Journal article, Original article Application of optical absorbance for the investigation of electronic and structural properties of sol-gel processed TiO2 films (2008) Welte A, Waldauf C, Brabec CJ, Wellmann P Journal article Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article Creation and identification of the two spin states of dicarbon antisite defects in 4H-SiC (2008) Steeds JW, Sullivan W, Furkert SA, Evans GA, Wellmann P Journal article