Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Scanning electron microscopical examination of the impact of laser patterning on microscopic inhomogeneities of Cu(In,Ga)(Se,S)2 absorbers produced by rapid thermal processing (2013) Künecke U, Hölzing A, Jost S, Lechner R, Vogt H, Heiss A, Palm J, et al. Journal article Morphological and optical stability in growth of fluorescent SiC on low off-axis substrates (2013) Jokubavicius V, Kaiser M, Hens P, Wellmann P, Liljedahl R, Yakimova R, Syväjärvi M Journal article, Original article Fabrication of broadband antireflective sub-wavelength structures on fluorescent SiC (2013) Ou Y, Jokubavicius V, Kaiser M, Wellmann P, Linnarsson MK, Yakimova R, Syväjärvi M, Ou H Journal article, Original article Modeling of the mass transport during the homo-epitaxial growth of silicon carbide by fast sublimation epitaxy (2013) Hupfer T, Hens P, Kaiser M, Jokubavicius V, Syväjärvi M, Wellmann P Journal article, Original article Photoluminescence topography of fluorescent SiC and its corresponding source crystals (2013) Wilhelm M, Kaiser M, Jokubavicius V, Syväjärvi M, Ou Y, Ou H, Wellmann P Journal article, Original article In-situ phase formation study of copper indium diselenide absorber layers from CuIn nanoparticles and evaporated selenium (2013) Möckel S, Hölzing A, Hock R, Wellmann P Journal article Application of 3-D X-ray computed tomography for the in-situ visualization of the SiC crystal growth interface during PVT bulk growth (2013) Neubauer G, Salamon M, Roider F, Uhlmann N, Wellmann P Journal article, Original article Step-flow growth of fluorescent 4H-SiC layers on 4 degree off-axis substrates (2013) Schimmel S, Kaiser M, Hens P, Jokubavicius V, Liljedahl R, Sun J, Yakimova R, et al. Journal article, Original article Polycrystalline SiC as source material for the growth of fluorescent SiC layers (2013) Kaiser M, Hupfer T, Jokubavicius V, Schimmel S, Syväjärvi M, Ou Y, Ou H, et al. Journal article, Original article Microsecond carrier lifetimes in bulk-like 3C-SiC grown by sublimation epitaxy (2013) Sun J, Kamiyama S, Wellmann P, Liljedahl R, Yakimova R, Syväjärvi M Journal article, Original article