Prof. Dr.-Ing. Peter Wellmann

Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)

Depth-resolved and temperature dependent analysis of phase formation processes in Cu–Zn–Sn–Se films on ZnO substrates (2017) Stroth C, Sayed MH, Schuster M, Ohland J, Hammer-Riedel I, Hammer MS, Wellmann P, et al. Journal article, Original article Growing bulk-like 3C-SiC from seeding material produced by CVD (2017) Schuh P, Arzig M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Chemical stability of carbon-based inorganic construction materials for in situ x-ray measurements of ammonothermal crystal growth of nitrides (2017) Schimmel S, Meisel M, Hertweck B, Steigerwald T, Nebel C, Alt N, Schlücker E, Wellmann P Conference contribution, Abstract of a poster Depth-resolved and temperature-dependent analysis of phase formation mechanisms in selenized Cu-Zn-Sn precursors by Raman spectroscopy (2016) Stroth C, Sayed MH, Schuster M, Ohland J, Hammer-Riedel I, Hammer MS, Wellmann P, et al. Journal article, Original article Cubic silicon carbide as a potential photovoltaic material (2016) Syväjärvi M, Ma Q, Jokubavicius V, Galeckas A, Sun J, Liu X, Jansson M, et al. Journal article Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions (2016) Wellmann P, Fahlbusch L, Salamon M, Uhlmann N Journal article, Original article Solar driven energy conversion applications based on 3C-SiC (2016) Sun J, Jokubavicius V, Gao L, Booker I, Jansson M, Liu X, Hofmann JP, et al. Journal article, Original article Physical vapor growth of double position boundary free, quasi-bulk 3C-SiC on high quality 3C-SiC on Si CVD templates (2016) Schuh P, Vecera P, Hirsch A, Syväjärvi M, Litrico G, La Via F, Mauceri M, Wellmann P Journal article, Original article Determination of the Molar Extinction Coefficient of Colloidal Selenium for Optical Characterization of Stabilized Nanoparticulate Dispersions (2016) Schuster M, Wernicke T, Möckel S, Wellmann P Journal article High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C (2016) Fahlbusch L, Schöler M, Mattle P, Schnitzer S, Khodamoradi H, Iwamoto N, Svensson BG, Wellmann P Journal article, Original article