apl. Prof. Dr. Martin Hundhausen

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

The moving photocarrier grating technique for the determination of transport parameters in thin film semiconductors (1996) Hundhausen M Journal article Influence of space charges on the resonant photoconductor employing a moving laser inducde grating (1996) Hundhausen M, Ley L Journal article Kinetics of field induced oxidation of hydrogen terminated Si(111) by means of a scanning force micoscope (1996) Ley L, Hundhausen M Journal article High field transport in the inversion layer of amorphous silicon thin film transistors (1996) Hundhausen M, Ley L Journal article Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films (1996) Ristein J, Hundhausen M, Ley L Journal article Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope (1996) Hundhausen M, Ley L Journal article Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics (1995) Hundhausen M, Ley L Journal article Bipolar treatment of the electrically detected transient grating technique (1995) Hundhausen M, Ley L Journal article Diamond growth during the bias pretreatment in microwave CVD of diamond (1995) Ristein J, Hundhausen M, Ley L Journal article Analysis of the moving-photocarrier-grating technique for the determination of the mobility and lifetime of photocarriers in semiconductors (1995) Hundhausen M, Ley L Journal article