apl. Prof. Dr. Martin Hundhausen

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Deriving the kinetic parameters for Pt-silicide formation from temperature ramped in situ ellipsometric measurements (2000) Hundhausen M, Ley L Journal article Disappearance of the LO-Phonon line in the Raman spectrum of 6H-SiC (2000) Hundhausen M, Ley L Journal article Isotope Effects on the Raman Spectrum of SiC (2000) Hundhausen M, Ley L Journal article Near-thermal equilibrium growth of SiC by physical vapor transport (1999) Hundhausen M Journal article Modeling the evolution of ellipsometric data during the thermally induced Pt-silicide formation: activation energies and prefactors (1999) Ley L, Hundhausen M Conference contribution Kinetics of platinum silicide formation followed in situ by spectroscopic ellipsometry (1999) Hundhausen M, Ley L Journal article Raman scttering in polycrystalline 3C-SiC: influence of stacking faults (1998) Hundhausen M, Ley L Journal article Comparative Raman studies of amorphous carbon films using infra red and visible excitation (1997) Hundhausen M Journal article Sensitive measurement of laser induced photocarrier gratings in semiconductors by optical heterodyne detection (1996) Hundhausen M, Ley L Conference contribution Resonant photoconductor structures for the generation of microwave currents: Importance of space charges (1996) Hundhausen M, Ley L Conference contribution