apl. Prof. Dr. Martin Hundhausen

Naturwissenschaftliche Fakultät Lehrstuhl für Laserphysik

Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Nucleophilic-alkylation-reoxidation: A functionalization sequence for single-wall carbon nanotubes (2006) Graupner R, Abraham J, Wunderlich D, Vencelová A, Lauffer P, Röhrl J, Hundhausen M, et al. Journal article, Original article In situ visualization of SiC physical vapor transport crystal growth (2005) Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al. Journal article Characterization of cubic bulk SiC and temperature induced polytype conversion in cubic CVD SiC studied by Raman spectroscopy (2004) Hundhausen M, Ley L Journal article Temperature induced polytype conversion in cubic silicon carbide studied by Raman spectroscopy (2004) Hundhausen M, Ley L Journal article Growth of 3C-SiC Bulk Material by the Modified Lely-Method (2004) Krieger M, Hundhausen M, Ley L Journal article Study of the temperature induced polytype conversion in cubic SiC by Raman spectroscopy (2004) Hundhausen M, Ley L Journal article Investigation of mass transport during PVT growth of SiC by 13C labeling of source material (2003) Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A Journal article, Original article Indentification of Dumb-Bell Shaped Interstitials in Electron Irradiated 6H-SiC by Photoluminescence Spectroscopy (2003) Ley L, Hundhausen M Journal article Raman excitation profiles of 3C-, 4H-, 6H-, 15R- and 21R-SiC (2003) Hundhausen M, Ley L Journal article