Prof. Dr. Lothar Ley

Naturwissenschaftliche Fakultät

High field transport in the inversion layer of amorphous silicon thin film transistors (1996) Hundhausen M, Ley L Journal article Growth of diamond on silicon during the bias pretreatment in chemically vapour deposition of polycristalline diamond films (1996) Ristein J, Hundhausen M, Ley L Journal article The density of states of ta-C, ta-C:H and a-C:H as determined by x-ray excited photoelectron spectroscopy and molecular dynamics calculation (1996) Ristein J, Ley L Journal article Surface Fermi level position of hydrogen passivated Si (111) surfaces (1996) Ristein J, Ley L Journal article Nanometer-scale modification of the tribological properties of Si(111):H surfaces performed and investigated by a conducting-probe scanning force microscope (1996) Hundhausen M, Ley L Journal article The influence of diamond chemical vapour deposition coating parameters on the micro structure and properties of titanium substrates (1996) Heinrich G, Grögler T, Rosiwal S, Singer R, Stöckel R, Ley L Journal article, Original article Nanometer-scale field-induced oxidation if Si(111): H by a conducting-probe scanning force microscope: Doping dependence and kinetics (1995) Hundhausen M, Ley L Journal article Bipolar treatment of the electrically detected transient grating technique (1995) Hundhausen M, Ley L Journal article The influence of chemical annealing on the electronic properties of amorphous silicon (1995) Ristein J, Ley L Conference contribution Diamond growth during the bias pretreatment in microwave CVD of diamond (1995) Ristein J, Hundhausen M, Ley L Journal article