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Lars Fahlbusch
List of publications:
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Institute Materials for Electronics and Energy Technology (i-MEET)
Professur für Werkstoffwissenschaften (Werkstoffe der Elektrotechnik)
Publications
(6)
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Journal article
Journal article
Book chapter / Article in edited volumes
Book chapter / Article in edited volumes
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Authored book
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Translation
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Thesis
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Solution Growth of Silicon Carbide Using the Vertical Bridgman Method (2018)
Fahlbusch L, Wellmann P
Journal article, Original article
Application of in-situ 3D computed tomography during PVT growth of 4H-SiC for the study of source material consumption under varying growth conditions (2016)
Wellmann P, Fahlbusch L, Salamon M, Uhlmann N
Journal article, Original article
High temperature solution growth of SiC by the vertical Bridgman method using a metal free Si-C-melt at 2300 °C (2016)
Fahlbusch L, Schöler M, Mattle P, Schnitzer S, Khodamoradi H, Iwamoto N, Svensson BG, Wellmann P
Journal article, Original article
X-Ray Computed Tomography specifically adapted for monitoring of dynamic processes in material science and chemistry (2016)
Salamon M, Reisinger S, Schlechter T, Schmitt M, Hofmann T, Uhlmann N, Schug S, et al.
Conference contribution, Conference Contribution
Growth of SiC bulk crystals for application in power electronic devices - process design, 2D and 3D X-ray in situ visualization and advanced doping (2015)
Wellmann P, Neubauer G, Fahlbusch L, Salamon M, Uhlmann N
Journal article
Generation of void-like structures during hot-hydrogen etching of Si substrates for 3C-SiC epitaxy (2011)
Hens P, Mueller J, Fahlbusch L, Spiecker E, Wellmann P, Spiecker E
Journal article, Original article