PD Dr. Tobias Erlbacher

Lehrstuhl für Elektronische Bauelemente Technische Fakultät

Via Size-Dependent Properties of TiAl Ohmic Contacts on 4H-SiC (2022) May A, Rommel M, Beuer S, Erlbacher T Journal article Defect reduction in SiC epilayers by different substrate cleaning methods (2022) Baierhofer D, Thomas B, Staiger F, Marchetti B, Foerster C, Erlbacher T Journal article Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v (2022) Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T Conference contribution The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020) Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T Journal article Design Considerations on a Monolithically Integrated, Self Controlled and Regenerative 900 V SiC Circuit Breaker (2020) Boettcher N, Erlbacher T Conference contribution Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures (2020) Besendörfer S, Meißner E, Zweipfennig T, Yacoub H, Fahle D, Behmenburg H, Kalisch H, et al. Journal article Vertical breakdown of GaN on Si due to V-pits (2020) Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al. Journal article Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC (2020) Hellinger C, Rusch O, Rommel M, Bauer AJ, Erlbacher T Conference contribution Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology (2020) Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T Conference contribution Influence of shallow pits and device design of 4H-SiC VDMOS transistors on in-line defect analysis by photoluminescence and differential interference contrast mapping (2020) Kocher M, Schlichting H, Kallinger B, Rommel M, Bauer AJ, Erlbacher T Conference contribution