Institut Lavoisier de Versailles (ILV)
Research facility
Location:
Versailles,
France (FR)
ROR: https://ror.org/05mzd8v39
Interface defect formation for atomic layer deposition of SnO2 on metal halide perovskites (2024)
Mallik N, Hajhemati J, Frégnaux M, Coutancier D, Toby A, Zhang ST, Hartmann C, et al.
Journal article
Influence of X-Ray Irradiation During Photoemission Studies on Halide Perovskite-Based Devices (2023)
Ralaiarisoa M, Frisch J, Frégnaux M, Cacovich S, Yaïche A, Rousset J, Gorgoi M, et al.
Journal article