Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics
Research facility
Location:
Frankfurt (Oder),
Germany (DE)
ISNI: 0000000101426781
ROR: https://ror.org/0489gab80
Show on Map:
Highly Integrated Dual-Band Digital Beamforming Synthetic Aperture Radar (2015)
Patyuchenko A, Younis M, Krieger G, Wang Z, Gao S, Qin F, Mao C, et al.
Conference contribution
CMOS-compatible optical switching concept based on strain-induced refractive-index tuning (2015)
Virgilio M, Witzigmann B, Bolognini G, Guha S, Schroeder T, Capellini G
Journal article
Graphene grown on Ge(001) from atomic source (2014)
Lippert G, Dabrowski J, Schroeder T, Schubert MA, Yamamoto Y, Herziger F, Maultzsch J, et al.
Journal article
GeSn/Ge multiquantum well photodetectors on Si substrates (2014)
Oehme M, Widmann D, Kostecki K, Zaumseil P, Schwartz B, Gollhofer M, Koerner R, et al.
Journal article
Molecular beam growth of micrometer-size graphene on mica (2013)
Lippert G, Dabrowski J, Yamamoto Y, Herziger F, Maultzsch J, Lemme MC, Mehr W, Lupina G
Journal article
Molecular beam epitaxy of graphene on mica (2012)
Lippert G, Dabrowski J, Yamamoto Y, Herziger F, Maultzsch J, Baringhaus J, Tegenkamp C, et al.
Journal article
Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes (2012)
Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J
Journal article
Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si (2011)
Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J
Conference contribution