Leibniz-Institut für innovative Mikroelektronik / IHP GmbH - Innovations for High Performance Microelectronics

Research facility


Location: Frankfurt (Oder), Germany (DE) DE

ISNI: 0000000101426781

ROR: https://ror.org/0489gab80

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
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Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

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Journal

Molecular beam epitaxy of graphene on mica (2012) Lippert G, Dabrowski J, Yamamoto Y, Herziger F, Maultzsch J, Baringhaus J, Tegenkamp C, et al. Journal article Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes (2012) Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J Journal article Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si (2011) Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J Conference contribution
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