NaMLab gGmbH
Industry / private company
Location:
Dresden,
Germany (DE)
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications (2011)
Mueller J, Boescke TS, Braeuhaus D, Schroeder U, Boettger U, Sundqvist J, Kuecher P, et al.
Journal article, Original article
Platinum contamination issues in ferroelectric memories (2002)
Boubekeur H, Mikolajick T, Pamler W, Höpfner J, Frey L, Ryssel H
Journal article, Original article
Effect of barium contamination on gate oxide integrity in high-k dram (2002)
Boubekeur H, Mikolajick T, Bauer A, Frey L, Ryssel H
Journal article, Original article
Barium, strontium and bismuth contamination in CMOS processes (2001)
Boubekeur H, Mikolajick T, Höpfner J, Dehm C, Pamler W, Steiner J, Kilian G, et al.
Authored book, Volume of book series