Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

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Abstract

Journal

Device Modeling of 4H-SiC PIN Photodiodes with Shallow Implanted Al Emitters for VUV Sensor Applications (2024) Schraml M, Rommel M, Papathanasiou N, Erlbacher T Journal article Precise Compensation of Device Variability in IGZO-based Ferroelectric ThinFilm Transistors for Enhanced Transparent Display Performance (2024) Joch D, Lehninger D, Sunil A, Sanctis S, Lang T, Zeltner J, Wartenberg P, et al. Conference contribution Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications (2024) Schwarberg J, Karhu R, Kallinger B, Rommel M, Schmidt R, Schulze J Conference contribution Modified Approach for the Rainflow Counting Analysis of Temperature Load Signals in Power Electronics Modules (2024) Letz S, März M, Zhao D Conference contribution Challenges of Junction Temperature Calibration of SiC MOSFETs for Power Cycling - a Dynamic Approach (2024) Breuer J, Dresel F, Leib J, März M, Schletz A Conference contribution Milliseconds Power Cycling (PCmsec) driving bipolar degradation in Silicon Carbide Power Devices (2024) Laha S, Leib J, Schletz A, März M, Liguda C, Faisal F, Momeni D Conference contribution Wide Bandwidth PCB Rogowski Coil Current Sensor with Droop Suppression and DC Restoration for In-Situ Inverter Measurements (2024) Quergfelder S, Sax J, Heckel T, Eckardt B, März M Conference contribution, Conference Contribution Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD (2024) Böttcher N, Sakai K, Szabo M, Beuer S, Rommel M Journal article, Report Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C (2024) Böttcher N, Kauth J, Rommel M, May A, Baier L, Jank M Journal article, Original article Unconventional conductivity increase in multilayer black phosphorus (2023) Kolesnik-Gray M, Meingast L, Siebert M, Unbehaun T, Huf T, Ellrott G, Abellan Saez G, et al. Journal article
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