Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019)
Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T
Conference contribution
Influence of trench design on the electrical properties of 650v 4H-SIC JBS diodes (2019)
Rusch O, Moult J, Erlbacher T
Conference contribution
Design of a 4H-SIC resurf N-LDMOS transistor for high voltage integrated circuits (2019)
Weiße J, Mitlehner H, Frey L, Erlbacher T
Conference contribution
Tracking of the growth interface during pvt-growth of SiC boules using a X-ray computed tomography setup (2019)
Arzig M, Salamon M, Uhlmann N, Wellmann P
Journal article, Original article
Channeling in 4H-SiC from an application point of view (2019)
Pichler P, Sledziewski T, Häublein V, Bauer AJ, Erlbacher T
Conference contribution
Attenuated phase shift mask for extreme ultraviolet: Can they mitigate three-dimensional mask effects? (2019)
Erdmann A, Evanschitzky P, Mesilhy HMS, Philipsen V, Hendrickx E, Bauer M
Journal article
Innovative Technologien für intelligente dezentrale Energiesysteme (2019)
März M, Oechsner R
Authored book, Manual
Analysis of a mixed transfer function and state space implementation of cascade control (2019)
Jung S, Matlok S, Eckardt B, März M
Conference contribution, Conference Contribution
Retrofitting Wide Band Gap Devices to classic Power Modules using Silicon RC Snubbers (2019)
Matlok S, Boettcher N, Jahn M, Hörauf P, Erlbacher T, Eckardt B
Conference contribution, Conference Contribution
Selective Silver Sintering on Organic-Based Circuit Boards (2019)
Müller J, Novak M, Dresel F, Bayer CF, Schletz A, Endres T, März M
Conference contribution, Conference Contribution