Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

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Abstract

Journal

Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices (2019) Schriefer T, Hofmann M Journal article Optimization of Ag-Ag Direct Bonding for Wafer-Level Power Electronics Packaging via Design of Experiments (2019) Yu Z, Wang S, Letz S, Bayer CF, Häußler F, Schletz A, SUGANUMA K Conference contribution, Conference Contribution Analysis of the geometry of the growth ridges and correlation to the thermal gradient during growth of silicon crystals by the Czochralski-method (2019) Stockmeier L, Kraner C, Fischer P, Epelbaum B, Reiman C, Friedrich J, Ramin G, Miller A Journal article Co-staining of microRNAs and their target proteins by miRNA in situ hybridization and immunohistofluorescence on prostate cancer tissue microarrays (2019) Eckstein M, Sailer V, Nielsen BS, Wittenberg T, Wiesmann V, Lieb V, Nolte E, et al. Journal article, Original article Luminescent properties of Ce3+ doped LiLuP4O12 tetraphosphate under synchrotron radiation excitation (2019) Zorenko T, Paprocki K, Levchuk I, Batentschuk M, Epelbaum B, Fedorov A, Zorenko Y Journal article Comprehensive SPICE model for power inductor losses (2019) Ehrlich S, Joffe C, Thielke H, Leinfelder M, März M Conference contribution Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Optimal One-Shot Detection of Preambles with Frequency Offset (2019) Würll R, Robert J, Kilian G, Heuberger G Conference contribution Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K (2019) Matthus CD, Di Benedetto L, Kocher M, Bauer AJ, Licciardo GD, Rubino A, Erlbacher T Journal article
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