Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)
Research facility
Location:
Erlangen,
Germany (DE)
ISNI: 0000000104810543
ROR: https://ror.org/04q5rka56
Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device (2022)
Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T
Conference contribution
Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers (2022)
Becker T, Boettcher N, Erlbacher T
Conference contribution, Conference Contribution
Explaining Image Classifications with Near Misses, Near Hits and Prototypes: Supporting Domain Experts in Understanding Decision Boundaries (2022)
Herchenbach M, Müller D, Scheele S, Schmid U
Conference contribution
Predicting Request Success with Objective Features in German Multimodal Speech Assistants (2022)
Weber M, Halimeh MM, Kellermann W, Popp B
Conference contribution
Silver Sintering of Packaged GaN-Devices on Printed Circuit Board (2022)
Müller J, Letz S, Simon FB, Bayer CF, Schletz A, Görlich J, Nishimura T
Journal article
MitoDet: Simple and Robust Mitosis Detection (2022)
Dexl J, Benz M, Bruns V, Kuritcyn P, Wittenberg T
Conference contribution
A Resonant Push-Pull DC-DC Converter With an Intrinsic Current Source Behavior For Radio Frequency Power Conversion (2022)
Weitz N, Utzelmann S, Ditze S, März M
Journal article
Mechanisms of ohmic contact formation of Ti/Al-based metal stacks on p-doped 4H-SiC (2022)
Kocher M, Rommel M, Michalowski P, Erlbacher T
Journal article
Adjustable Current Limit Feature with a Self-Sensing and Self-Triggering Monolithically Integrated SiC Circuit Breaker Device (2022)
Böttcher N, Takamori T, Wada K, Erlbacher T, Saito W, Nishizawa SI
Conference contribution, Conference Contribution
Influence of the growth conditions on the formation of macro-steps on the growth interface of SiC-Crystals (2021)
Arzig M, Künecke U, Salamon M, Uhlmann N, Wellmann P
Journal article