Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Objective Measures of Perceptual Audio Quality Reviewed: An Evaluation of Their Application Domain Dependence (2021) Torcoli M, Kastner T, Herre J Journal article Robust Slide Cartography in Colon Cancer Histology: Evaluation on a Multi-scanner Database (2021) Kuritcyn P, Geppert CI, Eckstein M, Hartmann A, Wittenberg T, Dexl J, Baghdadlian S, et al. Conference contribution Elliptical fitting as an alternative approach to complex nonlinear least squares regression for modeling electrochemical impedance spectroscopy (2021) Pfeiffer N, Wachter T, Frickel J, Hofmann C, Errachid A, Heuberger A Conference contribution A Geometric and Textural Model of the Colon as Ground Truth for Deep Learning-based 3D-reconstruction (2021) Hackner R, Walluscheck S, Lehmann E, Eixelberger T, Bruns V, Wittenberg T Conference contribution Uplink and Downlink MIMO-NOMA with Simultaneous Triangularization (2021) Krishnamoorthy A, Schober R Journal article BNST and amygdala activation to threat: Effects of temporal predictability and threat mode (2021) Siminski N, Böhme S, Zeller JB, Becker MP, Bruchmann M, Hofmann D, Breuer F, et al. Journal article Dimensioning battery energy storage systems for peak shaving based on a real-time control algorithm (2020) Lange C, Rueß A, Nuß A, Öchsner R, März M Journal article Cognitive Power Electronics for Intelligent Drive Technology (2020) Roeder G, Liu X, Hofmann M, Schellenberger M, Hilpert F, März M Conference contribution In-situ preparation of gan sacrificial layers on sapphire substrate in movpe reactor for self-separation of the overgrown gan crystal (2020) Faraji S, Meißner E, Weingärtner R, Besendörfer S, Friedrich J Journal article The impact of dislocations on AlGaN/GaN Schottky diodes and on gate failure of high electron mobility transistors (2020) Besendörfer S, Meißner E, Medjdoub F, Derluyn J, Friedrich J, Erlbacher T Journal article
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