Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie (IISB)

Research facility


Location: Erlangen, Germany (DE) DE

ISNI: 0000000104810543

ROR: https://ror.org/04q5rka56

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

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To

Abstract

Journal

Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit Operation (2023) Sk MR, Thunder S, Lehninger D, Sanctis S, Raffel Y, Lederer M, Jank MPM, et al. Journal article Experimental Assessment of LVDC-Grid Stability Optimization using Circuit Simulation and Machine Learning (2023) Schwanninger R, Roeder G, Wienzek P, Lavery M, Wunder B, Schellenberger M, Lorentz V, März M Conference contribution Modelling and Design of a Droop-Based Cascaded Controller for LLC Resonant Converter (2023) Yang X, Pohlenz S, Schwanninger R, Schleippmann N, Wunder B, März M Conference contribution Energy-Equivalent Inductance Measurement System (2023) Gehring J, Nowak A, Schwanninger R, Wunder B, März M Conference contribution Microstructure and Mechanical Properties of Hypereutectic Al-High Si Alloys up to 70 wt.% Si-Content Produced from Pre-Alloyed and Blended Powder via Laser Powder Bed Fusion (2023) Risse JH, Trempa M, Huber F, Höppel HW, Bartels D, Schmidt M, Reimann C, Friedrich J Journal article Scalable Quantum Memory Nodes using nuclear spins in Silicon Carbide (2023) Parthasarathy SK, Kallinger B, Kaiser F, Berwian P, Dasari D, Friedrich J, Nagy R Conference contribution 4H-SiC PIN Photodiode for VUV Detection Using an Enhanced Emitter Doping Design (2023) Schraml M, Papathanasiou N, May A, Rommel M, Erlbacher T Conference contribution Device Providing DC Short-Circuit Current (2023) Gehring J, Schwanninger R, Kaiser J, Wunder B, März M Conference contribution Analytical Loss Model of a Three-Level WBG NPC Inverter Comprising Reverse Conduction, Dead Time, Modulation Schemes and Switching Energy Analysis (2023) Quergfelder S, Heckel T, März M Conference contribution Influence of SiC chip thickness on the power cycling capability of power electronics assemblies – A comprehensive numerical study (2023) Zhao D, Letz S, Leib J, Schletz A Journal article