University of Montpellier / Université Montpellier

Simultaneous HESS and Chandra observations of Sagitarius A during an X-ray flare (2008) Aharonian F, Akhperjanian AG, De Almeida UB, Bazer-Bachi AR, Becherini Y, Behera B, Benbow W, et al. Journal article, Original article Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies (2007) Jang YS, Sakwe A, Wellmann P, Juillaguet S, Peyre H, Camassel J, Steeds JW Journal article, Original article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals (2006) Sakwe A, Müller R, Masri P, Wellmann P Journal article Optical mapping of aluminum doped p-type SiC wafers (2005) Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, et al. Journal article In situ visualization of SiC physical vapor transport crystal growth (2005) Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al. Journal article Analysis of graphitization during physical vapor transport growth of silicon carbide (2004) Wellmann P, Herro ZG, Sakwe A, Masri P, Bogdanov M, Karpov S, Kulik A, et al. Journal article, Original article Quasi-Stability of the Primary Flow in a Cone and Plate Viscometer (2004) Azerad P, Bänsch E Journal article, Original article Investigation of mass transport during PVT growth of SiC by 13C labeling of source material (2003) Herro ZG, Wellmann P, Püsche R, Hundhausen M, Ley L, Maier M, Masri P, Winnacker A Journal article, Original article Carbon SWNTs as wires and structural templates between nanoelectrodes (1999) Burghard M, Krstic V, Duesberg GS, Philipp G, Muster J, Roth S, Journet C, Bernier P Journal article, Original article