Sicrystal AG
Industry / private company
Location:
Nürnberg,
Germany (DE)
Doping induced lattice misfit in 4H-SiC homoepitaxy (2012)
Kallinger B, Berwian P, Friedrich J, Mueller G, Weber AD, Volz E, Trachta G, et al.
Journal article
Analysis on defect generation during the SiC bulk growth process (1999)
Hofmann HD, Schmitt E, Bickermann M, Kölbl M, Wellmann P, Winnacker A
Journal article, Original article