Leibniz-Institut für Kristallzüchtung / Leibniz Institute for Crystal Growth
Research facility
Location:
Berlin,
Germany (DE)
ISNI: 0000000404936586
ROR: https://ror.org/037p86664
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Dispersion analysis of arbitrarily cut orthorhombic crystals (2017)
Hoefer S, Ivanovski V, Uecker R, Kwasniewski A, Popp J, Mayerhoefer TG
Journal article
Luminescence from germanium and germanium on silicon (2014)
Arguirov T, Kittler M, Oehme M, Abrosimov NV, Vyvenko OF, Kasper E, Schulze J
Conference contribution
Dependence of the seed layer quality on different temperature ramp-up conditions for 3C-SiC hetero-epitaxy on Si (100) (2012)
Hens P, Wagner G, Hölzing A, Hock R, Wellmann P
Journal article
Sublimation growth of thick freestanding 3C-SiC using CVD-templates on silicon as seeds (2012)
Hens P, Jokubavicius V, Liljedahl R, Wagner G, Yakimova R, Wellmann P, Syväjärvi M
Journal article
Room temperature direct band-gap emission from an unstrained Ge p-i-n LED on Si (2011)
Arguirov T, Kittler M, Oehme M, Abrosimov NV, Kasper E, Schulze J
Conference contribution
Cathodoluminescence microscopy and spectroscopy of synthetic ruby crystals grown by the optical floating zone technique (2010)
Guguschev C, Goetze J, Göbbels M
Journal article