Universität Stuttgart

Room temperature direct band gap emission from Ge p-i-n heterojunction photodiodes (2012) Kasper E, Oehme M, Arguirov T, Werner J, Kittler M, Schulze J Journal article Epitaxially grown indium phosphide quantum dots on a virtual Ge substrate realized on Si(001) (2012) Wiesner M, Bommer M, Schulz WM, Etter M, Werner J, Oehme M, Schulze J, et al. Journal article Improving the on-resistance of FETs for power applications (2012) Isemann H, Fischer I, Hahnel D, Oehme M, Schulze J Conference contribution Tuning the germanium TFET: Device optimization for maximum ion (2012) Hähnel D, Fischer I, Isemann H, Oehme M, Schulze J Conference contribution CMOS-compatible plasmon propagation and detection in vertical Si and Ge p-i-n diodes (2012) Fischer IA, Eßlinger M, Vogelgesang R, Wu JL, Schulze J Conference contribution Si tunneling field effect transistor with tunnelling in-line with the gate field (2012) Fischer IA, Hähnel D, Isemann H, Kottantharayil A, Murali G, Oehme M, Schulze J Conference contribution Room-temperature electroluminescence from tensile strained double-heterojunction Ge pin LEDs on Si substrates (2012) Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J Conference contribution Electroluminescence of unstrained and tensile strained Ge-on-Si LEDs (2012) Schmid M, Oehme M, Gollhofer M, Kasche M, Kasper E, Schulze J Conference contribution Dual spherical spline: A new representation of ruled surface optimization (2012) Zhou Y, Schulze J, Schäffler S Conference contribution GeSn photodetection and electroluminescence devices on Si (2012) Oehme M, Kasper E, Schulze J Conference contribution