Universität Stuttgart

Comparison of spin lifetimes in n-Ge characterized between three-terminal and four-terminal nonlocal Hanle measurements (2013) Chang LT, Han W, Zhou Y, Tang J, Fischer IA, Oehme M, Schulze J, et al. Journal article Dislocation luminescence in highly doped degenerated germanium at room temperature (2013) Arguirov T, Vyvenko O, Oehme M, Schulze J, Kittler M Journal article Dual Spherical Spline and Its Application in Tool Path Planing for 5-Axis Flank Milling (2013) Zhou Y, Schulze J, Schäffler S Conference contribution Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates (2013) Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J Journal article Mn5Ge3C0.8 contacts for spin injection into Ge (2013) Fischer IA, Suergers C, Petit M, Le Thanh V, Schulze J Conference contribution Silicon tunneling field-effect transistors with tunneling in line with the gate field (2013) Fischer IA, Bakibillah ASM, Golve M, Haehnel D, Isemann H, Kottantharayil A, Oehme M, Schulze J Journal article Franz-Keldysh effect of Ge-on-Si pin diodes at common chip temperatures (2013) Schmid M, Kaschel M, Gollhofer M, Oehme M, Werner J, Ulbricht K, Kasper E, Schulze J Conference contribution Resistance-capacitance limitation of fast double heterojunction Ge p-i-n photodetectors (2013) Kaschel M, Schmid M, Gollhofer M, Oehme M, Kasper E, Schulze J Conference contribution A bipolar RRAM selector with designable polarity dependent on-voltage asymmetry (2013) Lashkare S, Karkare P, Bafna P, Raju MV, Srinivasan VS, Lodha S, Ganguly U, et al. Conference contribution Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn (2013) Oehme M, Buca D, Kostecki K, Wirths S, Hollaender B, Kasper E, Schulze J Journal article