Universität Stuttgart

Growth of patterned GeSn and GePb alloys by pulsed laser induced epitaxy (2017) Schlipf J, Frieiro JL, Fischer IA, Serra C, Schulze J, Chiussi S Conference contribution Local growth of graphene on Cu and Cu0.88Ni0.12 foil substrates (2017) Funk HS, Ng J, Kamimura N, Xie YH, Schulze J Conference contribution Device performance tuning of Ge gate-all-around tunneling field effect transistors by means of GeSn: Potential and challenges (2017) Rolseth EG, Blech A, Fischer IA, Hashad Y, Koerner R, Kostecki K, Kruglov A, et al. Conference contribution Features of polarized Raman spectra for homogeneous and non-homogeneous compressively strained Ge1−ySny alloys (2017) Perova TS, Kasper E, Oehme M, Cherevkov S, Schulze J Journal article Die neue VDI-Richtlinie 5610 Blatt 2 „Wissensbasierte Konstruktion“ (2017) Luft T, Roth D, Wartzack S, Binz H Conference contribution, Conference Contribution Fabrication and simulation of vertical Ge-based P-channel planar-doped barrier FETs with 40 nm channel length (2017) Elogail Y, Elkhouly K, Fischer I, Kostecki K, Schulze J Conference contribution Tailoring the structure and thermoelectric properties of BaTiO3 via Eu2+ substitution (2017) Xiao X, Widenmeyer M, Xie W, Zou T, Yoon S, Scavini M, Checchia S, et al. Journal article Rotationally symmetric formulation of the wave propagation method-application to the straylight analysis of diffractive lenses (2017) Schmidt S, Thiele S, Herkommer A, Tuennermann A, Gross H Journal article Two-channel conduction in YbPtBi (2017) Schilling MB, Loehle A, Neubauer D, Shekhar C, Felser C, Dressel M, Pronin AV Journal article Surface analysis of epitaxially grown GeSn alloys with Sn contents between 15% and 18% (2017) Kormos L, Kratzer M, Kostecki K, Oehme M, Sikola T, Kasper E, Schulze J, Teichert C Journal article