Infineon Technologies AG

Activation and dissociation of proton-induced donor profiles in silicon (2013) Laven JG, Job R, Hans Joachim S, Niedernostheide FJ, Schustereder W, Frey L Journal article, Original article High-Q Inductors Embedded in the Fan-Out Area of an eWLB (2012) Wojnowski M, Issakov V, Knoblinger G, Pressel K, Sommer G, Weigel R Journal article The thermal budget of hydrogen-related donor profiles: Diffusion-limited activation and thermal dissociation (2012) Laven J, Job R, Schulze HJ, Niedernostheide FJ, Schustereder W, Frey L Conference contribution, Conference Contribution Passive components using quasi-CPW in eWLB package (2012) Pour Mousavi SM, Wojnowski M, Pressel K, Sommer G, Weigel R Conference contribution Embedded Wafer Level Ball Grid Array (eWLB) Technology for Millimeter-Wave Applications (2011) Wojnowski M, Lachner R, Böck J, Wagner C, Starzer F, Sommer G, Pressel K, Weigel R Conference contribution Conversion efficiency of radiation damage profiles into hydrogenrelated donor profiles (2011) Laven JG, Job R, Schustereder W, Hans Joachim S, Niedernostheide FJ, Schulze H, Frey L Authored book, Volume of book series An unconventional VNA-based time-domain waveform load-pull test bench (2010) Teppati V, Pinarello S, Ferrero A, Müller JE Conference contribution, Conference Contribution A High-Linearity Broadband 55-77 GHz Differential Low-Noise Amplifier with 20 dB Gain in SiGe Technology (2010) Kissinger D, Aufinger K, Meister T, Maurer L, Weigel R Conference contribution A 31-dBm, high ruggedness power amplifier in 65-nm standard CMOS with high-efficiency stacked-cascode stages (2010) Leuschner S, Pinarello S, Hodel U, Müller JE, Klar H Conference contribution The Impact of Helium Co-Implantation on Hydrogen Induced Donor Profiles in Float Zone Silicon (2010) Laven J, Job R, Schulze HJ, Niedernostheide FJ, Häublein V, Schulze H, Schustereder W, et al. Journal article