Infineon Technologies AG

Analytical Equivalent Circuit Extraction Procedure for Broadband Scalable Modeling of Three-Port Center-Tapped Symmetric On-Chip Inductors (2019) Issakov V, Kehl-Waas S, Breun S Journal article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes (2019) Rasinger F, Prohinig J, Schulze H, Schulze HJ, Pobegen G Journal article A 60 GHz 30.5% PAE Differential Stacked PA with Second Harmonic Control in 45 nm PD-SOI CMOS (2019) Ciocoveanu R, Weigel R, Hagelauer AM, Issakov V Conference contribution, Conference Contribution 5G mm-Wave Stacked Class AB Power Amplifier in 45 nm PD-SOI CMOS (2018) Ciocoveanu R, Weigel R, Hagelauer AM, Geiselbrechtinger A, Issakov V Conference contribution, Conference Contribution A 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology for Integrated Phased-Array Radar Applications (2018) Rimmelspacher J, Weigel R, Issakov V Conference contribution Concepts for a Monostatic Radar Transceiver Front-end in eWLB Package with Off-Chip Quasi-Circulator for 60 GHz (2018) Schmidbauer P, Wojnowski M, Weigel R, Hagelauer AM Conference contribution, Conference Contribution A Quad-Core 60 GHz Push-Push 45 nm SOI CMOS VCO with -101.7 dBc/Hz Phase Noise at 1 MHz offset, 19 % Continuous FTR and -187 dBc/Hz FoMT (2018) Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V Conference contribution, Conference Contribution A Low Insertion-Loss 10-110 GHz Digitally Tunable SPST Switch in 22 nm FD-SOI CMOS (2018) Ciocoveanu R, Weigel R, Hagelauer AM, Issakov V Conference contribution, Conference Contribution A 110-135 GHz Integrated Sixport Receiver Front-End in a 130-nm BiCMOS Technology (2018) Völkel M, Borutta K, Dietz M, Aufinger K, Weigel R, Hagelauer AM Conference contribution, Conference Contribution