Infineon Technologies AG

Industry / private company


Location: Neubiberg, Germany (DE) DE

ISNI: 0000000405528752

ROR: https://ror.org/005kw6t15

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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

Publication year

From
To

Abstract

Journal

An Integrated 28 GHz Front-End Module for 5G Applications in 45 nm PD-SOI (2019) Ciocoveanu R, Lammert V, Weigel R, Issakov V Conference contribution Highly-Integrated Low-Power 60 GHz Multichannel Transceiver for Radar Applications in 28 nm CMOS (2019) Issakov V, Ciocoveanu R, Weigel R, Geiselbrechtinger A, Rimmelspacher J Conference contribution Highly-Integrated <0.14 mm2D-Band Receiver Front-Ends for Radar and Imaging Applications in a 130 nm SiGe BiCMOS Technology (2019) Aguilar E, Issakov V, Weigel R Conference contribution, Conference Contribution LC Tank Differential Inductor-Coupled Dual-Core 60 GHz Push-Push VCO in 45 nm RF-SOI CMOS Technology (2019) Rimmelspacher J, Weigel R, Hagelauer AM, Issakov V Conference contribution, Conference Contribution Experimental Considerations on Accurate fT and fmax Extraction for MOS Transistors Measured up to 110 GHz (2019) Rimmelspacher J, Werthof A, Weigel R, Geiselbrechtinger A, Issakov V Conference contribution, Conference Contribution Antenna Aperture Tuning with High-Voltage Bulk-CMOS Switch-Based RF Capacitor (2019) Solomko V, Özdamar O, Wang K, Pfuhl N, Thomas A, Weigel R, Hagelauer AM Conference contribution Hardware Toolkit for Rapid Prototyping of Antenna Tuning Systems (2019) Özdamar O, Hagelauer AM, Weigel R, Solomko V Conference contribution Low-Power K-Band LNA in 45 nm SOI CMOS (2019) Issakov V, Ciocoveanu R Conference contribution Analytical Equivalent Circuit Extraction Procedure for Broadband Scalable Modeling of Three-Port Center-Tapped Symmetric On-Chip Inductors (2019) Issakov V, Kehl-Waas S, Breun S Journal article Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution