Institute Materials for Electronics and Energy Technology (i-MEET)

Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics (2005) Pons M, Nishizawa SI, Wellmann P, Ucar M, Blanquet E, Dedulle J, Baillet F, et al. Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability (2005) Sakwe A, Herro ZG, Wellmann P Journal article, Original article Photoluminescence study of in-situ rare earth doped PVT-grown SiC single crystals (2005) Schmitt H, Müller R, Maier M, Winnacker A, Wellmann P Journal article, Original article High Al-doping of SiC using a modified PVT (M-PVT) growth set-up (2005) Müller R, Künecke U, Weingärtner R, Schmitt H, Desperrier P, Wellmann P Journal article, Original article In situ visualization of SiC physical vapor transport crystal growth (2005) Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al. Journal article Synthesis and characterization of cellular apatite-whitlockite composites for bone substitution (2005) Götz-Neunhoeffer F, Enderle R, Göbbels M Journal article Entwicklung einer porösen Calciumphosphat-Keramik im Hinblick auf die Verwendung als Knochenersatzstoff (2005) Göbbels M, Enderle R, Götz-Neunhoeffer F Journal article