Institute Materials for Electronics and Energy Technology (i-MEET)

Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping (2006) Künecke U, Wellmann P Journal article The influence of microstructure on the magnetic properties of WC/Co hardmetals (2006) Topic I, Sockel HG, Wellmann P, Göken M Journal article Effect of Mg2+ content on lattice parameter and phase transformation temperature of β-α TCP (2006) Götz-Neunhoeffer F, Neubauer J, Göbbels M, Enderle R Journal article, Original article Special Issue on Silicon Carbid CVD for Electronic Device Applications (2006) Wellmann P, Pons M Edited Volume Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai (2006) Wellmann P, Shi G, Feng Z Edited Volume SiC epitaxial structure growth: evaluation and modeling (2006) Nishizawa SI, Wellmann P, Pons M Book chapter / Article in edited volumes Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (2006) Sakwe A, Müller R, Wellmann P Journal article, Original article Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article