Institute Materials for Electronics and Energy Technology (i-MEET)

Bulk growth of SiC (2008) Wellmann P, Müller R, Sakwe A, Künecke U, Hens P, Stockmeier M, Konias K, et al. Journal article, Original article Status of SiC bulk growth processes (2007) Chaussende D, Wellmann P, Pons M Journal article Electrical, optical and morphological properties of nanoparticle indium-tin-oxide layers (2007) Groß M, Winnacker A, Wellmann P Journal article Contactless electrical defect characterization and topography of a-plane grown epitaxial layers (2007) Wagner M, Mustafa E, Hahn S, Syväjärvi M, Yakimova R, Jang YS, Sakwe A, Wellmann P Journal article, Original article Light extraction from OLEDs for lighting applications through light scattering (2007) Bathelt R, Buchhauser D, Gärditz C, Paetzold R, Wellmann P Journal article Cathodoluminescence characterization of organic semiconductor materials for light emitting device applications (2007) Wellmann P, Karl U, Kleber S, Schmitt H Journal article Numerical modeling and experimental verification of modified-PVT crystal growth of SiC (2007) Wellmann P, Pons M Journal article Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526] (2007) Sakwe A, Müller R, Wellmann P Journal article, Erratum Electronics Production: Research from Materials to Systems, Proceedings of the 2nd Chinese-German Summer School in Shanghai (2007) Wellmann P, Feng Z, Shi G Edited Volume Growth and characterization of C-13 enriched 4H-SiC for fundamental materials studies (2007) Jang YS, Sakwe A, Wellmann P, Juillaguet S, Peyre H, Camassel J, Steeds JW Journal article, Original article