Institute Materials for Electronics and Energy Technology (i-MEET)

Modeling and experimental verification of SiC M-PVT bulk crystal growth (2006) Wellmann P, Müller R, Pons M Journal article, Original article Influence of magnesium doping on the phase transformation temperature of Beta-TCP ceramics examined by Rietveld refinement (2005) Enderle R, Götz-Neunhoeffer F, Göbbels M, Müller F, Greil P Journal article Additional pipework opens up transistor applications for SiC (2005) Wellmann P Journal article, Original article Optical mapping of aluminum doped p-type SiC wafers (2005) Wellmann P, Straubinger T, Künecke U, Müller R, Sakwe A, Pons M, Thuaire A, et al. Journal article SiC single crystal growth by a modified physical vapor transport technique (2005) Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, et al. Journal article Numerical simulation of SIC processes: A characterization tool for the design of epitaxial structures in electronics (2005) Pons M, Nishizawa SI, Wellmann P, Ucar M, Blanquet E, Dedulle J, Baillet F, et al. Journal article, Original article Micro-optical characterization study of highly p-type doped SiC : Al wafers (2005) Wellmann P, Müller R, Pons M, Thuaire A, Crisci A, Mermoux M, Auvray L Journal article, Original article Progress and limits of the numerical simulation of SiC bulk and epitaxy growth processes (2005) Pons M, Blanquet E, Dedulle J, Ucar M, Wellmann P, Danielsson Ö, Ferret P, et al. Journal article, Original article Modified physical vapor transport growth of SiC - Control of gas phase composition for improved process conditions (2005) Wellmann P, Straubinger T, Desperrier P, Müller R, Künecke U, Sakwe A, Schmitt H, et al. Journal article, Original article Development of a KOH defect etching furnace with absolute in-situ temperature measurement capability (2005) Sakwe A, Herro ZG, Wellmann P Journal article, Original article