Institute Materials for Electronics and Energy Technology (i-MEET)

Investigation of the charge carrier concentration in highly aluminum doped SiC using Raman scattering (2006) Müller R, Künecke U, Thuaire A, Mermoux M, Pons M, Wellmann P Journal article Basal plane dislocation dynamics in highly p-type doped versus highly n-type doped SiC (2006) Wellmann P, Queren D, Müller R, Sakwe A, Künecke U Journal article, Original article Evolution and stability of basal plane dislocations during bulk growth of highly n-type doped versus highly p-type doped 6H-SiC (2006) Sakwe A, Müller R, Queren D, Künecke U, Wellmann P Journal article In-situ observation of mass transfer in the CF-PVT growth process by X-ray imaging (2006) Chaussende D, Wellmann P, Ucar M, Pons M, Madar R Journal article, Original article Investigation of the ß-alpha TCP phase transformation in dependence of Mg-content (2006) Götz-Neunhoeffer F, Göbbels M, Enderle R Conference contribution Dislocation evolution and distribution during physical vapor transport (PVT) growth of bulk 6H-SiC single crystals (2006) Sakwe A, Müller R, Masri P, Wellmann P Journal article Electronic Raman Studies of Shallow Donors in Silicon Carbide (2006) Püsche R, Hundhausen M, Ley L, Semmelroth K, Pensl G, Desperrier P, Wellmann P, et al. Journal article, Original article Anomalous charge carrier transport phenomena in highly aluminum doped SiC (2006) Müller R, Künecke U, Weingärtner R, Maier M, Wellmann P Journal article Barix multilayer barrier technology for organic solar cells (2006) Moro L, Rutherford NM, Visser RJ, Hauch JA, Klepek C, Denk P, Schilinsky P, Brabec C Conference contribution, Conference Contribution Alternative device concepts for future requirements of organic photovoltaic cells (2006) Waldauf C, Morana M, Denk P, Brabec CJ, Brabec C, Coakley K, Schilinsky P, Choulis SA Conference contribution, Conference Contribution