Institute Materials for Electronics and Energy Technology (i-MEET)

Growth of silicon carbide bulk crystals with a modified physical vapor transport technique (2006) Müller R, Künecke U, Queren D, Sakwe A, Wellmann P Journal article Influence of dislocation content on the quantitative determination of the doping level distribution in n-GaAs using absorption mapping (2006) Künecke U, Wellmann P Journal article The influence of microstructure on the magnetic properties of WC/Co hardmetals (2006) Topic I, Sockel HG, Wellmann P, Göken M Journal article Effect of Mg2+ content on lattice parameter and phase transformation temperature of β-α TCP (2006) Götz-Neunhoeffer F, Neubauer J, Göbbels M, Enderle R Journal article, Original article Special Issue on Silicon Carbid CVD for Electronic Device Applications (2006) Wellmann P, Pons M Edited Volume Embedded Systems and Materials – Research for Advanced Applications, Proceedings of the 1st Chinese-German Summer School in Shanghai (2006) Wellmann P, Shi G, Feng Z Edited Volume SiC epitaxial structure growth: evaluation and modeling (2006) Nishizawa SI, Wellmann P, Pons M Book chapter / Article in edited volumes Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (2006) Sakwe A, Müller R, Wellmann P Journal article, Original article Silicon Carbide Growth: C/Si Ratio Evaluation and Modeling (2006) Pons M, Wellmann P, Nishizawa SI, Blanquet E, Dedulle J, Chaussende D Journal article, Original article Results of SIMS, LTPL and temperature-dependent Hall effect measurements performed on Al-doped alpha-SiC substrates grown by the M-PVT method (2006) Contreras S, Zielinski M, Konczewicz L, Blanc C, Juillaguet S, Müller R, Künecke U, et al. Journal article, Original article