Professur für Kristallographie und Strukturphysik


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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

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Abstract

Journal

Observation of lattice plane bending during SiC PVT bulk growth using in-situ high energy x-ray diffraction (2010) Hock R, Konias K, Perdicaro LMS, Magerl A, Hens P, Wellmann P Journal article, Original article Time-resolved x-ray diffraction study of laser-induced shock and acoustic waves in single crystalline silicon (2009) Liss KD, D'Almeida T, Kaiser M, Hock R, Magerl A, Eloy JF Journal article The formation of the thin-film solar cell absorber CuInS2 by annealing of Cu-In-S stacked elemental layer precursors - A comparison of selenisation and sulfurisation (2009) Jost S, Schurr R, Hölzing A, Hergert F, Hock R, Purwins M, Palm J Conference contribution Sulfo-selenization of metallic thin films of Cu, In and Cu-In (2009) Hölzing A, Schurr R, Schäfer H, Jaeger A, Jost S, Palm J, Deseler K, et al. Journal article The crystallisation of Cu2ZnSnS4 thin film solar cell absorbers from co-electroplated Cu-Zn-Sn precursors (2009) Schurr R, Hölzing A, Jost SG, Hock R, Voss T, Schulze J, Kirbs A, et al. Conference contribution Cu2ZnSnS4 thin film solar cells from electroplated precursors: Novel low-cost perspective (2009) Ennaoui APD, Lux-Steiner M, Weber A, Abou-Ras D, Koetschau I, Schock HW, Schurr R, et al. Conference contribution In-situ Observation of Polytype Switches During SiC PVT Bulk Growth by High Energy X-ray Diffraction (2009) Wellmann P, Konias K, Hens P, Hock R, Magerl A Journal article, Original article Germanium Incorporation during PVT Bulk Growth of Silicon Carbide (2009) Hens P, Künecke U, Konias K, Hock R, Wellmann P Journal article, Original article Thermal Expansion Coefficients of 6H Silicon Carbide (2009) Stockmeier M, Sakwe A, Hens P, Wellmann P, Hock R, Magerl A Journal article, Original article Bulk growth of SiC - review on advances of SiC vapor growth for improved doping and systematic study on dislocation evolution (2008) Sakwe A, Stockmeier M, Hens P, Müller R, Queren D, Künecke U, Konias K, et al. Journal article