Lehrstuhl für Elektronische Bauelemente

Ab Initio Calculations to Determine Tunneling Parameters for 4H-SiC Tunneling Field-Effect Transistor Simulations (2024) Ley M, Dick J, Schulze J Conference contribution Investigation of CMOS Single Process Steps on 4H-SiC a-Plane Wafers for Quantum Applications (2024) Schwarberg J, Karhu R, Kallinger B, Rommel M, Schmidt R, Schulze J Conference contribution Bandwidth enhancement in GeSn-on-Si avalanche photodiodes with a 60 GHz gain-bandwidth-product (2024) Wanitzek M, Schwarz D, Schulze J, Oehme M Conference contribution Nitride semiconductor crystal growth at FAU Erlangen-Nürnberg (2024) Wostatek T, Schimmel S Conference contribution, Abstract of a poster Photodeposition-Based Synthesis of TiO2@IrOx Core–Shell Catalyst for Proton Exchange Membrane Water Electrolysis with Low Iridium Loading (2024) Hoffmeister D, Finger S, Fiedler L, Ma TC, Körner A, Zlatar M, Fritsch B, et al. Journal article Supported Ruthenium Phosphide as a Promising Catalyst for Selective Hydrogenation of Sugars (2024) Popp L, Kampe P, Fritsch B, Hutzler A, Poller MJ, Albert J, Schühle P Journal article Transition from etch-back to growth conditions during ammonothermal growth of GaN – a transient numerical model for convective flow and temperature distribution in a retrograde solubility configuration (2024) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Conference contribution, Abstract of a poster SiC engineered substrate: increasing SiC MOSFETs current density from device to module level (2024) Becker T Conference contribution, Conference Contribution Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD (2024) Böttcher N, Sakai K, Szabo M, Beuer S, Rommel M Journal article, Report Investigation of Ohmic Contacts and Resistances of a 4H-SiC CMOS Technology up to 550◦C (2024) Böttcher N, Kauth J, Rommel M, May A, Baier L, Jank M Journal article, Original article