Lehrstuhl für Elektronische Bauelemente

Analysis of the effect of germanium preamorphization on interface defects and leakage current for high-k metal-oxide-semiconductor field-effect transistor (2011) Roll G, Jakschik S, Goldbach M, Wachowiak A, Mikolajick T, Frey L Journal article, Original article Ferroelectricity in yttrium-doped hafnium oxide (2011) Müller J, Schröder UP, Böschke TS, Müller I, Böttger U, Wilde L, Sundqvist J, et al. Journal article, other Gate oxide reliability at the nanoscale evaluated by combining conductive atomic force microscopy and constant voltage stress (2011) Erlbacher T, Yanev VC, Rommel M, Bauer A, Frey L Journal article Dopant profiles in silicon created by MeV hydrogen implantation: Influence of annealing parameters (2011) Laven J, Hans Joachim S, Häublein V, Niedernostheide FJ, Ryssel H, Frey L Journal article Properties of SiO2 and Si3 N4 as gate dielectrics for printed ZnO transistors (2011) Walther S, Polster S, Meyer B, Jank MPM, Ryssel H, Frey L Journal article, Original article Manufacturing, characterization, and application of nanoimprinted metallic probe demonstrators for electrical scanning probe microscopy (2011) Jambreck JD, Yanev V, Schmitt H, Rommel M, Bauer AJ, Frey L Journal article, Original article Leakage current and defect characterization of p+n-source/drain diodes (2011) Roll G, Goldbach M, Frey L Journal article, Original article Investigation of the reliability of 4H-SiC MOS devices for high temperature applications (2011) Le-Huu M, Schmitt H, Noll S, Grieb M, Schrey FF, Bauer AJ, Frey L, Ryssel H Journal article, Original article Influence of annealing parameters on surface roughness, mobility, and contact resistance of aluminium implanted 4H SiC (2011) Schmitt H, Haeublein V, Bauer A, Frey L Authored book, Volume of book series Impact of carbon junction implant on leakage currents and defect distribution: Measurement and simulation (2011) Roll G, Jakschik S, Burenkov A, Goldbach M, Mikolajick T, Frey L Journal article, Original article