Lehrstuhl für Elektronische Bauelemente

Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K (2019) Matthus CD, Di Benedetto L, Kocher M, Bauer AJ, Licciardo GD, Rubino A, Erlbacher T Journal article Laser Writing of Scalable Single Color Centers in Silicon Carbide (2019) Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, et al. Journal article Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface (2019) Udvarhelyi P, Nagy R, Kaiser F, Lee SY, Wrachtrup J, Gali A Journal article Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy (2019) Hutzler A, Matthus C, Dolle C, Rommel M, Jank M, Spiecker E, Frey L Journal article Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems (2019) Schriefer T, Hofmann M, Rauh H, Eckardt B, März M Conference contribution, Conference Contribution Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019) Albrecht M, Erlbacher T, Bauer A, Frey L Journal article, Report Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV (2019) Grünler S, Rattmann G, Erlbacher T, Bauer AJ, Krach F, Frey L Conference contribution Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples (2019) Fedorova N, Macher P, Jovicic V, Zbogar-Rasic A, Delgado A Conference contribution Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride (2019) Boettcher N, Heckel T, Erlbacher T, Pelaic K Conference contribution