Lehrstuhl für Elektronische Bauelemente

Parameter study on the electrical contact resistance of axially canted coil springs for high-current systems (2019) Schriefer T, Hofmann M, Rauh H, Eckardt B, März M Conference contribution, Conference Contribution Improving 5V digital 4H-SIC CMOS ics for operating at 400°C using PMOS channel implantation (2019) Albrecht M, Erlbacher T, Bauer A, Frey L Journal article, Report Towards highly integrated, automotive power SoCs using capacitors operating at 100 V implemented in TSV (2019) Grünler S, Rattmann G, Erlbacher T, Bauer AJ, Krach F, Frey L Conference contribution Experimental investigation of the gravity influence on the condensation behaviour on Al and PTFE-samples (2019) Fedorova N, Macher P, Jovicic V, Zbogar-Rasic A, Delgado A Conference contribution Silicon RC-Snubber for 900 V Applications Utilising non-Stoichiometric Silicon Nitride (2019) Boettcher N, Heckel T, Erlbacher T, Pelaic K Conference contribution Performance of 4H-SIC bipolar diodes as temperature sensor at low temperatures (2019) Di Benedetto L, Matthus C, Erlbacher T, Bauer AJ, Licciardo GD, Rubino A, Frey L Conference contribution Determination of compensation ratios of al-implanted 4H-SIC by tcad modelling of TLM measurements (2019) Kocher M, Yao B, Weiße J, Rommel M, Xu ZW, Erlbacher T, Bauer A Conference contribution Comparison between NI-SALICIDE and self-aligned lift-off used in fabrication of ohmic contacts for sic power MOSFET (2019) Śledziewski T, Erlbacher T, Bauer A, Frey L, Chen X, Zhao Y, Li C, Dai X Conference contribution On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Design considerations for robust manufacturing and high yield of 1.2 kv 4H-SIC VDMOS transistors (2019) Schlichting H, Sledziewski T, Bauer AJ, Erlbacher T Conference contribution