Lehrstuhl für Elektronische Bauelemente

Deeper insight into lifetime-engineering in 4H-SiC by ion implantation (2019) Erlekampf J, Kallinger B, Weiße J, Rommel M, Berwian P, Friedrich J, Erlbacher T Journal article Design Considerations for Robust Manufacturing and High Yield of 1.2 kV 4H-SiC VDMOS Transistors (2019) Schlichting H, Sledziewski T, Bauer A, Erlbacher T Journal article Preparation of Graphene-Supported Microwell Liquid Cells for In Situ Transmission Electron Microscopy (2019) Hutzler A, Fritsch B, Jank MPM, Branscheid R, Spiecker E, März M Journal article, Original article Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum A hybrid frequency-time-domain approach to determine the vibration fatigue life of electronic devices (2019) Schriefer T, Hofmann M Journal article Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements Between 20.5 K and 802 K (2019) Matthus CD, Di Benedetto L, Kocher M, Bauer AJ, Licciardo GD, Rubino A, Erlbacher T Journal article Laser Writing of Scalable Single Color Centers in Silicon Carbide (2019) Chen YC, Salter PS, Niethammer M, Widmann M, Kaiser F, Nagy R, Morioka N, et al. Journal article Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface (2019) Udvarhelyi P, Nagy R, Kaiser F, Lee SY, Wrachtrup J, Gali A Journal article Large-Area Layer Counting of Two-Dimensional Materials Evaluating the Wavelength Shift in Visible-Reflectance Spectroscopy (2019) Hutzler A, Matthus C, Dolle C, Rommel M, Jank MPM, Spiecker E, Frey L Journal article