Lehrstuhl für Elektronische Bauelemente


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Types of publications

Journal article
Book chapter / Article in edited volumes
Authored book
Translation
Thesis
Edited Volume
Conference contribution
Other publication type
Unpublished / Preprint

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Abstract

Journal

Ultrathin and flexible sensors for pressure and temperature monitoring inside battery cells (2022) Dreher V, Joch D, Kren H, Schwarberg J, Jank M Conference contribution Electroluminescence of SixGe1-x-ySny / Ge1-ySny pin-Diodes Grown on a GeSn Buffer (2022) Seidel L, Schafer S, Oehme M, Buca D, Capellini G, Schulze J, Schwarz D Conference contribution GeSn-on-Si Avalanche Photodiodes for Short-Wave Infrared Detection (2022) Wanitzek M, Oehme M, Spieth C, Schwarz D, Seidel L, Schulze J Conference contribution Short Circuit Performance and Current Limiting Mode of a Monolithically Integrated SiC Circuit Breaker for DC Applications up to 800 v (2022) Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T Conference contribution Temperature field and fluid flow in ammonothermal growth of GaN during etch-back and crystal growth for a retrograde solubility configuration (2022) Schimmel S, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Conference contribution, Abstract of a poster Electrically pumped SiGeSn microring lasers (2022) Marzban B, Seidel L, Liu T, Kiyek V, Wu K, Zollner MH, Ikonik Z, et al. Conference contribution High Energy Computed Tomography as a Tool for Validation of Numerical Simulations of Ammonothermal Crystal Growth of GaN (2022) Schimmel S, Salamon M, Tomida D, Ishiguro T, Honda Y, Chichibu SF, Amano H Conference contribution, Abstract of a poster In Situ Monitoring Technologies as Prospective Validation Tools for Numerical Simulations of Ammonothermal Crystal Growth (2022) Schimmel S, Salamon M, Tomida D, Kobelt I, Heinlein L, Kimmel AC, Steigerwald T, et al. Conference contribution, Abstract of a poster Fabrication Aspects and Switching Performance of a Self-Sensing 800 V SiC Circuit Breaker Device (2022) Boettcher N, Takamori T, Wada K, Saito W, Nishizawa SI, Erlbacher T Conference contribution Influence of Non-Stoichiometric Silicon Nitride Layer Thickness on Electrical Properties and Manufacturability of 900 V Silicon RC-Snubbers (2022) Becker T, Boettcher N, Erlbacher T Conference contribution, Conference Contribution