Lehrstuhl für Elektronische Bauelemente

X-ray characterization of physical-vapor-transport-grown bulk AlN single crystals (2020) Wicht T, Mueller S, Weingaertner R, Epelbaum B, Besendoerfer S, Blaess U, Weißer M, et al. Journal article RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC (2020) Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T Journal article Effect of temperature on the Fowler-Nordheim barrier height, flat band potentials and electron/hole effective masses in the MOS capacitors (2020) Toumi S, Ouennoughi Z, Murakami K Journal article Mode properties of telecom wavelength InP-based high-(Q/V) L4/3 photonic crystal cavities (2020) Rickert L, Fritsch B, Kors A, Reithmaier JP, Benyoucef M Journal article Interplay between C-doping, threading dislocations, breakdown, and leakage in GaN on Si HEMT structures (2020) Besendörfer S, Meißner E, Zweipfennig T, Yacoub H, Fahle D, Behmenburg H, Kalisch H, et al. Journal article ASNOM mapping of SiC epilayer doping profile and of surface phonon polariton waveguiding (2020) Kazantsev D, Ryssel H Journal article Vertical breakdown of GaN on Si due to V-pits (2020) Besendörfer S, Meißner E, Tajalli A, Meneghini M, Freitas JA, Derluyn J, Medjdoub F, et al. Journal article Integration of printed electronics with potted power electronic modules (2020) Zimmermann V, Zörner A, Chen W, Yu Z, Jank M, Bayer C, Schletz A, März M Conference contribution Low-resistance ohmic contact formation by laser annealing of N-implanted 4H-SiC (2020) Hellinger C, Rusch O, Rommel M, Bauer AJ, Erlbacher T Conference contribution Reducing on-resistance for SiC diodes by thin wafer and laser anneal technology (2020) Rusch O, Hellinger C, Moult J, Corcoran Y, Erlbacher T Conference contribution