Chair of Applied Physics (LAP)

On the origin of charge compensation in aluminum-implanted n-type 4H-SiC by analysis of hall effect measurements (2019) Weiße J, Hauck M, Sledziewski T, Krieger M, Bauer A, Mitlehner H, Frey L, Erlbacher T Conference contribution Annealing of Pt-H Defects in High-Voltage Si p+/n− Diodes (2019) Rasinger F, Prohinig J, Schulze H, Schulze HJ, Pobegen G Journal article Lightwave-controlled electron dynamics in graphene (2019) Heide C, Higuchi T, Ullmann K, Weber HB, Hommelhoff P Conference contribution Growth of Monolayer WS2Single Crystals with Atmospheric Pressure CVD: Role of Temperature (2019) Xie Y, Wang G, Wang Z, Nan T, Wang H, Wang Y, Zhan Y, et al. Conference contribution Interaction of carrier envelope phase-stable laser pulses with graphene:the transition from the weak-field to the strong-field regime (2019) Heide C, Boolakee T, Higuchi T, Weber HB, Hommelhoff P Journal article Coherent Electron Trajectory Control in Graphene (2018) Heide C, Higuchi T, Weber HB, Hommelhoff P Journal article, Letter Controlled generation of intrinsic near-infrared color centers in 4H-SiC via proton irradiation and annealing (2018) Rühl M, Ott C, Götzinger S, Krieger M, Weber HB Journal article, Letter Structural fluctuations cause spin-split states in tetragonal (CH₃NH₃)PbI₃ as evidenced by the circular photogalvanic effect (2018) Niesner D, Hauck M, Shrestha S, Levchuk I, Matt G, Osvet A, Batentschuk M, et al. Journal article, Original article Effect of TCNQ Layer Cover on Oxidation Dynamics of Black Phosphorus (2018) Meingast L, Kolesnik-Gray M, Siebert M, Abellan Saez G, Wild S, Lloret Segura VJ, Mundloch U, et al. Journal article, Original article Determination of Performance-Relevant Trapped Charge in 4H Silicon Carbide MOSFETs (2018) Rasinger F, Pobegen G, Aichinger T, Weber HB, Krieger M Journal article, Letter