Chair of Applied Physics (LAP)

Publisher's Note: Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (AIP Advances (2019) 9 (055308) DOI: 10.1063/1.5096440) (2019) Weiße J, Hauck M, Krieger M, Bauer AJ, Erlbacher T Journal article, Erratum Aluminum acceptor activation and charge compensation in implanted p-type 4H-SiC (2019) Weiße J, Hauck M, Krieger M, Bauer A, Erlbacher T Journal article, Letter Präziser Einblick ins Innerste von Siliziumkarbid-MOSFETs (2019) Hauck M, Krieger M Journal article, other Fractional Quantum Conductance Plateaus in Mosaic-Like Conductors and Their Similarities to the Fractional Quantum Hall Effect (2019) Kißlinger F, Rienmüller D, Ott C, Kampert E, Weber HB Journal article, Letter Monolayer black phosphorus by sequential wet-chemical surface oxidation (2019) Wild S, Lloret V, Vega-Mayoral V, Vella D, Nuin E, Siebert M, Kolesnik-Gray M, et al. Journal article, Original article Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET (2019) Berens J, Rasinger F, Aichinger T, Heuken M, Krieger M, Pobegen G Journal article, Original article An adapted method for analyzing 4H silicon carbide metal-oxide-semiconductor field-effect transistors (2019) Hauck M, Lehmeyer J, Pobegen G, Weber HB, Krieger M Journal article, Original article Room temperature terahertz detection by rectifying field effect transistors (2019) Preu S, Regensburger S, Lu H, Gossard AC Conference contribution Basal plane dislocation conversion enhancement in 4H-SiC homoepitaxial layers by ion implantation into the wafer (2019) Heidorn C, Esteve R, Höchbauer T, Krieger M, Weber HB, Rupp R Conference contribution New SiC epitaxial growth process with up to 100% BPD to TED defect conversion on 150mm hot-wall CVD reactor (2019) Höchbauer T, Heidorn C, Tsavdaris N Conference contribution