Journal of Crystal Growth
Journal Abbreviation: J CRYST GROWTH
ISSN: 0022-0248
Publisher: Elsevier
Publications (52)
Prediction of the three-phase boundary movement in Czochralski crystal growth (2010)
Raufeisen A, Breuer M, Botsch T, Delgado A
Journal article
Transient 3D simulation of Czochralski crystal growth considering diameter variations (2009)
Raufeisen A, Breuer M, Botsch T, Delgado A
Journal article, Original article
Determination of dislocation density in GaN layers using KOH defect MOVPE grown etching (2008)
Wellmann P, Sakwe A, Oehlschläger F, Hoffmann V, Zeimer U, Knauer A
Journal article
Numerical modeling and experimental verification of modified-PVT crystal growth of SiC (2007)
Wellmann P, Pons M
Journal article
Erratum to “Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC”: [J. Crystal Growth 289 (2006) 520–526] (2007)
Sakwe A, Müller R, Wellmann P
Journal article, Erratum
Growth of cubic SiC single crystals by the physical vapor transport technique (2007)
Semmelroth K, Krieger M, Pensl G, Nagasawa H, Püsche R, Hundhausen M, Ley L, et al.
Journal article
Kinetics of the reactive crystallization of CuInSe2 and CuGaSe2 chalcopyrite films for solar cell applications (2006)
Hock R
Conference contribution
Optimization of KOH etching parameters for quantitative defect recognition in n- and p-type doped SiC (2006)
Sakwe A, Müller R, Wellmann P
Journal article, Original article
SiC single crystal growth by a modified physical vapor transport technique (2005)
Wellmann P, Desperrier P, Müller R, Straubinger T, Winnacker A, Baillet F, Blanquet E, et al.
Journal article
In situ visualization of SiC physical vapor transport crystal growth (2005)
Wellmann P, Herro ZG, Winnacker A, Püsche R, Hundhausen M, Masri P, Kulik A, et al.
Journal article