IEEE Transactions on Electron Devices
Journal Abbreviation: IEEE T ELECTRON DEV
ISSN: 0018-9383
Publisher: Institute of Electrical and Electronics Engineers (IEEE)
Publications (19)
A Multigap Multiaperture Pseudospark Switch and Its Performance Analysis for High-Voltage Applications (2020)
Pal UN, Lamba RP, Varun V, Meena BL, Frank K
Journal article
RESURF n-LDMOS Transistor for Advanced Integrated Circuits in 4H-SiC (2020)
Weiße J, Matthus C, Schlichting H, Mitlehner H, Erlbacher T
Journal article
An Iterative Surface Potential Algorithm Including Interface Traps for Compact Modeling of SiC-MOSFETs (2020)
Albrecht M, Klüpfel F, Erlbacher T
Journal article
A 4H-SiC UV Phototransistor with Excellent Optical Gain Based on Controlled Potential Barrier (2020)
Di Benedetto L, Licciardo GD, Erlbacher T, Bauer AJ, Rubino A
Journal article
Demonstration of UV-Induced Threshold Voltage Instabilities in Vertical GaN Nanowire Array-Based Transistors (2019)
Ruzzarin M, Meneghini M, De Santi C, Neviani A, Yu F, Strempel K, Fatahilah MF, et al.
Journal article
Detection and Cryogenic Characterization of Defects at the SiO2/4H-SiC Interface in Trench MOSFET (2019)
Berens J, Rasinger F, Aichinger T, Heuken M, Krieger M, Pobegen G
Journal article, Original article
Transient phenomena in sub-bandgap impact ionization in Si n-i-p-i-n Diode (2018)
Das B, Schulze J, Ganguly U
Journal article
Normally off Vertical 3-D GaN Nanowire MOSFETs with Inverted p-GaN Channel (2018)
Yu F, Strempel K, Fatahilah MF, Zhou H, Roemer F, Bakin A, Witzigmann B, et al.
Journal article
TIPS Pentacene as a Beneficial Interlayer for Organic Photodetectors in Imaging Applications (2018)
Montenegro Benavides C, Biele M, Schmidt O, Brabec C, Tedde SF
Journal article, Original article
Advanced 4H-SiC p-i-n Diode as Highly Sensitive High-Temperature Sensor Up To 460 °C (2017)
Matthus C, Erlbacher T, Hess A, Bauer AJ, Frey L
Journal article, Original article