Applied Physics Letters
Journal Abbreviation: APPL PHYS LETT
ISSN: 0003-6951
Publisher: American Institute of Physics (AIP)
Publications (272)
The effects of polarization dynamics and domain switching energies on field induced phase transformations of perovskite ferroelectrics (2011)
Franzbach DJ, Xu BX, Mueller R, Webber KG
Journal article
High shunt resistance in polymer solar cells comprising a MoO3 hole extraction layer processed from nanoparticle suspension (2011)
Stubhan T, Ameri T, Salinas Batallas M, Krantz J, Machui F, Halik M, Brabec C
Journal article, Original article
Čerenkov third-harmonic generation in X(2) nonlinear photonic crystal (2011)
Sheng Y, Wang W, Shiloh R, Roppo V, Kong Y, Arie A, Krolikowski W
Journal article
Germanium-tin p-i-n photodetectors integrated on silicon grown by molecular beam epitaxy (2011)
Werner J, Oehme M, Schmid M, Kaschel M, Schirmer A, Kasper E, Schulze J
Journal article
Thickness dependence of the integrated Bragg intensity for statistically disturbed silicon crystals (2011)
Will J, Gröschel A, Weißer M, Magerl A
Journal article
Influence of self-assembled monolayer dielectrics on the morphology and performance of α,ω-dihexylquaterthiophene in thin film transistors (2011)
Novak M, Schmaltz T, Faber H, Halik M
Journal article
Surface band bending and electron affinity as a function of hole accumulation density in surface conducting diamond (2011)
Edmonds MT, Pakes CI, Mammadov S, Zhang W, Tadich A, Ristein J, Ley L
Journal article
Current annealing and electrical breakdown of epitaxial graphene (2011)
Hertel S, Kißlinger F, Jobst J, Waldmann D, Krieger M, Weber HB
Journal article, Letter
The quasi-free-standing nature of graphene on H-saturated SiC(0001) (2011)
Speck F, Jobst J, Fromm F, Ostler M, Waldmann D, Hundhausen M, Weber HB, Seyller T
Journal article, Letter
Ferroelectric Zr0.5Hf0.5O2 thin films for nonvolatile memory applications (2011)
Mueller J, Boescke TS, Braeuhaus D, Schroeder U, Boettger U, Sundqvist J, Kuecher P, et al.
Journal article, Original article