Applied Physics Letters
Journal Abbreviation: APPL PHYS LETT
ISSN: 0003-6951
Publisher: American Institute of Physics (AIP)
Publications (274)
On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements (2015)
Piprek J, Roemer F, Witzigmann B
Journal article
Direct measurements of the magnetocaloric effect in pulsed magnetic fields: The example of the Heusler alloy Ni50Mn35In15 (2015)
Zavareh MG, Mejia CS, Nayak AK, Skourski Y, Wosnitza J, Felser C, Nicklas M
Journal article
Forward scattering in hard X-ray photoelectron spectroscopy: Structural investigation of buried Mn-Ga films (2015)
Violbarbosa CE, Ouardi S, Kubota T, Mizukami S, Fecher GH, Miyazaki T, Ikenaga E, Felser C
Journal article
Acceptor impurity activation in III-nitride light emitting diodes (2015)
Roemer F, Witzigmann B
Journal article
Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes (2015)
Kumar A, Latzel M, Christiansen S, Kumar V, Singh R
Journal article
Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors (2015)
Held M, Schießl S, Miehler D, Gannott F, Zaumseil J
Journal article
A nanoscale vacuum-tube diode triggered by few-cycle laser pulses (2015)
Higuchi T, Maisenbacher L, Liehl A, Dombi P, Hommelhoff P
Journal article
A self-assembled metamaterial for Lamb waves (2015)
Khanolkar A, Wallen S, Ghanem MA, Jenks J, Vogel N, Boechler N
Journal article, Original article
On-the-fly scans for X-ray ptychography (2014)
Pelz PM, Guizar-Sicairos M, Thibault P, Johnson I, Holler M, Menzel A
Journal article
Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si (2014)
Fischer IA, Chang LT, Suergers C, Rolseth E, Reiter S, Stefanov S, Chiussi S, et al.
Journal article