Applied Physics Letters

Journal Abbreviation: APPL PHYS LETT
ISSN: 0003-6951
Publisher: American Institute of Physics (AIP)

Publications (274)

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On the uncertainty of the Auger recombination coefficient extracted from InGaN/GaN light-emitting diode efficiency droop measurements (2015) Piprek J, Roemer F, Witzigmann B Journal article Direct measurements of the magnetocaloric effect in pulsed magnetic fields: The example of the Heusler alloy Ni50Mn35In15 (2015) Zavareh MG, Mejia CS, Nayak AK, Skourski Y, Wosnitza J, Felser C, Nicklas M Journal article Forward scattering in hard X-ray photoelectron spectroscopy: Structural investigation of buried Mn-Ga films (2015) Violbarbosa CE, Ouardi S, Kubota T, Mizukami S, Fecher GH, Miyazaki T, Ikenaga E, Felser C Journal article Acceptor impurity activation in III-nitride light emitting diodes (2015) Roemer F, Witzigmann B Journal article Effect of rapid thermal annealing on barrier height and 1/f noise of Ni/GaN Schottky barrier diodes (2015) Kumar A, Latzel M, Christiansen S, Kumar V, Singh R Journal article Polymer/metal oxide hybrid dielectrics for low voltage field-effect transistors with solution-processed, high-mobility semiconductors (2015) Held M, Schießl S, Miehler D, Gannott F, Zaumseil J Journal article A nanoscale vacuum-tube diode triggered by few-cycle laser pulses (2015) Higuchi T, Maisenbacher L, Liehl A, Dombi P, Hommelhoff P Journal article A self-assembled metamaterial for Lamb waves (2015) Khanolkar A, Wallen S, Ghanem MA, Jenks J, Vogel N, Boechler N Journal article, Original article On-the-fly scans for X-ray ptychography (2014) Pelz PM, Guizar-Sicairos M, Thibault P, Johnson I, Holler M, Menzel A Journal article Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si (2014) Fischer IA, Chang LT, Suergers C, Rolseth E, Reiter S, Stefanov S, Chiussi S, et al. Journal article