Solid-State Electronics
Journal Abbreviation: SOLID STATE ELECTRON
ISSN: 0038-1101
Publisher: Elsevier
Publications (11)
Ferroelectric field-effect transistors based on solution-processed electrochemically exfoliated graphene (2018)
Heidler J, Yang S, Feng X, Muellen K, Asadi K
Journal article
Performance analysis and simulation of vertical gallium nitride nanowire transistors (2018)
Witzigmann B, Yu F, Frank K, Strempel K, Fatahilah MF, Schumacher HW, Wasisto HS, et al.
Journal article
Evidence of low injection efficiency for implanted p-emitters in bipolar 4H-SiC high-voltage diodes (2018)
Matthus C, Hürner A, Erlbacher T, Bauer AJ, Frey L
Journal article, Review article
Determination of Fowler-Nordheim tunneling parameters in Metal-Oxide-Semiconductor structure including oxide field correction using a vertical optimization method (2016)
Toumi, S. S, Ouennoughi Z, Strenger C, Frey L
Journal article
Vertical Ge and GeSn heterojunction gate-all-around tunneling field effect transistors (2015)
Schulze J, Blech A, Datta A, Fischer IA, Haehnel D, Naasz S, Rolseth E, Tropper EM
Journal article
Absorption coefficients of GeSn extracted from PIN photodetector response (2015)
Ye K, Zhang W, Oehme M, Schmid M, Gollhofer M, Kostecki K, Widmann D, et al.
Journal article
Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates (2013)
Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J
Journal article
Feasibility and limitations of anti-fuses based on bistable non-volatile switches for power electronic applications (2012)
Frey L, Hürner A, Bauer A, Erlbacher T
Journal article, Original article
Germanium photodetectors on Silicon-on-insulator grown with differential molecular beam epitaxy in silicon wells (2011)
Kaschel M, Schmid M, Oehme M, Werner J, Schulze J
Journal article
Germanium vertical Tunneling Field-Effect Transistor (2011)
Haehnel D, Oehme M, Sarlija M, Karmous A, Schmid M, Werner J, Kirfel O, et al.
Journal article